Part number : 23N50E
Functions : N-CHANNEL SILICON POWER MOSFET
Package information : TO-3P(Q) Type
23N50E, 23N50E Datasheet, 23N50E PDF, N-CHANNEL SILICON POWER MOSFET. 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the. 5PCS MOSFET Transistor FUJI TO-3P FMH23N50E FE23N50E 23N50E. We located in the biggest electronic market in ShenZhen,China.We specialize in electronic components more than 10 years,such as ICs,Transistors,Diodes,Resistors,Capacitors and so on. 23N50E datasheet, 23N50E datasheets, 23N50E pdf, 23N50E circuit: FUJI - N-CHANNEL SILICON POWER MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Manufacturer : Fuji Electric Device Technology
Image :
23n50e Mosfet Pdf
Features
1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGSringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability
Applications
1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters
Pinout :
Other data sheets within the file : FMH23N50E
23N50E Datasheet PDF Download
23n50e Mosfet Price
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Fuji Electric
N-CHANNEL SILICON POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise More controllable switching dv/dt by gate resistance Narrow band of the gate threshold voltage (3.0±0.5V) Outline Drawings [mm] Applications UPS (Uninterruptible Power Supply) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Drain-Source Voltage Pulsed Drain Current Repetitive and Non-Repetitive Maximum Avalanche Current Repetitive Maximum Avalanche Energy Peak Diode Recovery -di/dt VDS ID VGS EAS dV/dt Maximum Power Dissipation Operating and Storage Tch Characteristics 500 ±92 23 31.5 100 315 -55 to + 150 Drain(D) Source(S) V A V mJ kV/µs W °C VGS = -30V Note*2 Note*4 Ta=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Input Capacitance Reverse Transfer Capacitance Turn-Off Time Gate-Source Charge Avalanche Capability Reverse Recovery Time Symbol VGS (th) IGSS gfs Coss td(on) td(off) Qth QGS IAV trr Conditions ID=250µA, VDS=VGS VDS=400V, VGS=0V ID=11.5A, VGS=10V VDS=25V f=1MHz VGS=10V RGS=5.6Ω ID=23A L=1.16mH, Tch=25°C IF=23A, VGS=0V Tch =25°C min. 2.5 - - - - - - - - - - - - 10 28 330 24 150 11 24 - 0.5 Thermal Characteristics Thermal resistance Rth (ch-c) Test Conditions Channel to ambient typ. Note *2 : Stating Tch=25°C, IAS=10A, L=14.1mH, Vcc=50V, RG=50Ω EAS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C. max. 3.5 250 0.245 5250 36 19.5 30 139.5 45 1.35 - 0.40 Unit V nA S ns A µs Unit °C/W |
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Fuji Electric
N-CHANNEL SILICON POWER MOSFETAllowable Power Dissipation 350 250 150 50 0 25 50 75 100 125 Typical Output Characteristics 70 60 50 6.0V 40 20 10 0 4 8 12 16 20 Typical Transconductance 100 10 0.1 1 10 FUJI POWER MOSFET ID=f(VDS):Duty=0(Single pulse),Tc=25°C t= 10µs 100 1ms 10-2 Square waveform t 100 VDS [V] D.C. Typical Transfer Characteristic 100 1 0 1 2 3 4 5 6 7 8 9 10 Typical Drain-Source on-state Resistance 0.9 0.7 0.6 0.4 10V 0.2 0.0 ID [A] Free Datasheet http://www.datasheet-pdf.com/ |
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Mosfet 23n50e